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Annual Review of Condensed Matter Physics

Volume 5, 2014

Molecular Beam Epitaxy of Ultra-High-Quality AlGaAs/GaAs Heterostructures: Enabling Physics in Low-Dimensional Electronic Systems

Abstract

Among very-low-disorder systems of condensed matter, the high-mobility two-dimensional electron gas (2DEG) confined in aluminum gallium arsenide (AlGaAs)–gallium arsenide (GaAs) heterostructures holds a privileged position as a platform for the discovery of new electronic states driven by strong Coulomb interactions. Molecular beam epitaxy (MBE), an ultra-high vacuum (UHV), thin-film deposition technique, produces the highest quality 2DEGs and has played a central role in a number of discoveries that have at their root the interplay of reduced dimensionality, strong electron-electron interactions, and disorder. This review attempts to describe the latest developments in heterostructure design, MBE technology, and the evolution of our understanding of disorder that result in improved material quality and facilitate discovery of new phenomena at ever finer energy scales.

Keyword(s): molecular beam epitaxy, two-dimensional electron gas
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2014-03-10
2024-05-01
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Literature Cited

  1. Tsui DC, Stormer HL, Gossard AC. 1982. Phys. Rev. Lett. 48:1559–62
  2. Torchinsky DH, Mahmood F, Bollinger AT, Bozovic I, Gedik N. 2013. Nat. Mater. 12:387–91
  3. Oh S, Crane TA, Van Harlingen DJ, Eckstein JN. 2006. Phys. Rev. Lett. 96:107003
  4. Ohtomo A, Hwang HY. 2004. Nature 427:423–25
  5. Brooks CM, Fitting Kourkoutis L, Heeg T, Schubert J, Muller DA, Schlom DG. 2009. Appl. Phys. Lett. 94:162905
  6. Wang G, Zhu X, Sun Y, Li Y, Zhang T et al. 2011. Adv. Mater. 23:2929–32
  7. Konig M, Wiedmann S, Brune C, Roth A, Buhmann H et al. 2007. Science 318:766–70
  8. Cho AY, Arthur JR. 1975. Prog. Solid State Chem. 10:157–91
  9. Tsao JY. 1993. Materials Fundamentals of Molecular Beam Epitaxy San Diego, CA: Acad. Press
  10. Pimpinelli A, Villain J. 1998. Physics of Crystal Growth Cambridge: Cambridge Univ. Press
  11. Herman MA, Sitter H. 1996. Molecular Beam Epitaxy: Fundamentals and Current Status Berlin: Springer-Verlag, 2nd ed..
  12. Ledentsov NN. 1999. Growth Processes and Surface Phase Equilibria in Molecular Beam Epitaxy Berlin: Springer-Verlag
  13. Farrow RFC. 1995. Molecular Beam Epitaxy, Applications to Key Materials Park Ridge, NJ: Noyes Publ
  14. Schubert EF. 1995. Doping in III–V Semiconductors Cambridge: Cambridge Univ. Press
  15. Melloch MR. 1993. Thin Solid Films 231:74–85
  16. Pfeiffer LN, West KW, Willett RL, Akiyama H, Rokhinson LP. 2005. Bell Labs Tech. J. 10:151–59
  17. Chou HT, Luscher S, Goldhaber-Gordon D, Manfra MJ, Sergent AM et al. 2005. Appl. Phys. Lett. 86:073108
  18. Manfra MJ, Baldwin KW, Sergent AM, West KW, Molnar RJ, Caissie J. 2004. Appl. Phys. Lett. 85:5394–96
  19. Manfra MJ, Baldwin KW, Sergent AM, Molnar RJ, Caissie J. 2004. Appl. Phys. Lett. 85:1722–24
  20. Dingle R, Stormer HL, Gossard AC, Wiegmann W. 1978. Appl. Phys. Lett. 33:665–66
  21. Stormer HL, Dingle R, Gossard AC, Wiegmann W, Sturge MD. 1979. Solid State Commun. 29:705–9
  22. Eisenstein JP, Cooper KB, Pfeiffer LN, West KW. 2002. Phys. Rev. Lett. 88:076801
  23. Umansky V, Heiblum M, Levinson Y, Smet J, Nubler J, Dolev M. 2009. J. Cryst. Growth 311:1658–61
  24. Hwang EH, Das Sarma S. 2008. Phys. Rev. B 77:235437
  25. Pfeiffer LN, West KW, Stormer HL, Baldwin KW. 1989. Appl. Phys. Lett. 55:1888–90
  26. Okada Y, Sugaya T, Ohta S, Fujita T, Kawabe M. 1995. Jpn. J. Appl. Phys. 34:238–44
  27. Okada Y, Fujita T, Kawabe M. 1995. Appl. Phys. Lett. 67:676–78
  28. Zhou ZY, Zheng CX, Tang WX, Jesson DE, Tersoff J. 2010. Appl. Phys. Lett. 97:121912
  29. Umansky V, de-Picciotto R, Heiblum M. 1997. Appl. Phys. Lett. 71:683–85
  30. Lang DV. 1974. J. Appl. Phys. 45:3023–32
  31. Blood P, Harris JJ. 1984. J. Appl. Phys. 56:993–1007
  32. Larkins EC, Hellman ES, Schlom DG, Harris JS Jr, Kim MH, Stillman GE. 1986. Appl. Phys. Lett. 49:391–93
  33. Chand N, Miller RC, Sergent AM, Sputz SK, Lang DV. 1988. Appl. Phys. Lett. 52:1721–23
  34. Chand N, Harris TD, Chu SNG, Becker EE, Sergent AM et al. 1991. J. Cryst. Growth 111:20–25
  35. Stanley CR, Holland MC, Kean AH, Chamberlain JM, Grimes RT, Stanaway MB. 1991. J. Cryst. Growth 111:14–19
  36. O’Hanlon JF. 1989. A User’s Guide to Vacuum Technology New York: Wiley, 2nd ed..
  37. Schmult S, Taylor S, Dietsche W. 2009. J. Cryst. Growth 311:1655–57
  38. Chadi DJ, Chang KJ. 1988. Phys. Rev. Lett. 61:873–76
  39. Chadi DJ, Chang KJ. 1989. Phys. Rev. B 39:10063–74
  40. Chand N, Henderson T, Klem J, Masselink WT, Fischer R et al. 1984. Phys. Rev. B 30:4481–92
  41. Friedland KJ, Hey R, Kostial H, Klann R, Ploog K. 1996. Phys. Rev. Lett. 77:4616–19
  42. Laughlin RB. 1983. Phys. Rev. Lett. 50:1395–98
  43. Haldane FDM. 1983. Phys. Rev. Lett. 51:605–8
  44. Halperin BI. 1984. Phys. Rev. Lett. 52:1583–86
  45. Das Sarma S, Pinzcuk A. 1997. Perspectives in Quantum Hall Effects: Novel Quantum Liquids in Low-Dimensional Semiconductor Structures New York: Wiley
  46. Prange R, Girvin SM. 1990. The Quantum Hall Effect New York: Springer-Verlag
  47. Moore G, Read N. 1991. Nucl. Phys. B 360:362–96
  48. Levin M, Halperin BI, Rosenow B. 2007. Phys. Rev. Lett. 99:236806
  49. Jain JK. 1989. Phys. Rev. Lett. 63:199–202
  50. Greiter M, Wen XG, Wilczek F. 1992. Nucl. Phys. B 374:567–614
  51. Read N, Green D. 2000. Phys. Rev. B 61:10267–97
  52. Halperin BI, Lee PA, Read N. 1993. Phys. Rev. B 47:7312–43
  53. Read N, Rezayi E. 1996. Phys. Rev. B 54:16864–87
  54. Das Sarma S, Freedman M, Nayak C. 2005. Phys. Rev. Lett. 94:016802
  55. Nayak C, Simon SH, Stern A, Freedman M, Das Sarma S. 2008. Rev. Mod. Phys. 80:1083–159
  56. Bonderson P, Kitaev A, Shtengel K. 2006. Phys. Rev. Lett. 96:016803
  57. Stern A, Halperin BI. 2006. Phys. Rev. Lett. 96:016802
  58. Stern A, von Oppen F, Mariani E. 2004. Phys. Rev. B 70:205338
  59. Willett RL, Eisenstein JP, Stormer HL, Tsui DC, Gossard AC, English JH. 1987. Phys. Rev. Lett. 59:1776–79
  60. Eisenstein JP, Willett RL, Stormer HL, Pfeiffer LN, West KW. 1990. Surf. Sci. 229:31–33
  61. Pan W, Xia JS, Shvarts V, Adams DE, Stormer HL et al. 1999. Phys. Rev. Lett. 83:3530–33
  62. Storni M, Morf RH, Das Sarma S. 2010. Phys. Rev. Lett. 104:076803
  63. Morf RH, d’Ambrumenil N. 2003. Phys. Rev. B 68:113309
  64. Morf RH, d’Ambrumenil N, Das Sarma S. 2002. Phys. Rev. B 66:075408
  65. Xia JS, Pan W, Vicente CL, Adams ED, Sullivan NS et al. 2004. Phys. Rev. Lett. 93:176809
  66. Read N, Rezayi E. 1999. Phys. Rev. B 59:8084–92
  67. Pan W, Xia JS, Stormer HL, Tsui DC, Vincente CL et al. 2008. Phys. Rev. B 77:075307
  68. Kumar A, Csathy GA, Manfra MJ, Pfeiffer LN, West KW. 2010. Phys. Rev. Lett. 105:246808
  69. Choi HC, Kang W, Das Sarma S, Pfeiffer LN, West KW. 2008. Phys. Rev. B 77:081301
  70. Dean CR, Piot BA, Hayden P, Das Sarma S, Gervais G et al. 2008. Phys. Rev. Lett. 100:146803
  71. Nuebler J, Umansky V, Morf R, Heiblum M, von Klitzing K, Smet J. 2010. Phys. Rev. B 81:035316
  72. Samkharadze N, Watson JD, Gardner G, Manfra MJ, Pfeiffer LN et al. 2011. Phys. Rev. B 84:121305
  73. Deng N, Watson JD, Rokhinson LP, Manfra MJ, Csathy GA. 2012. Phys. Rev. B 86:201301
  74. Pan W, Masuhara N, Sullivan NS, Baldwin KW, West KW et al. 2011. Phys. Rev. Lett. 106:206806
  75. Gamez G, Muraki K. 2013. Phy. Rev. B 88:075308
  76. Gardner G, Watson JD, Mondal S, Deng N, Csathy GA, Manfra MJ. 2013. Appl. Phys. Lett. 102:252103
  77. Kou A, Marcus CM, Pfeiffer LN, West KW. 2012. Phys. Rev. Lett. 108:256803
  78. McClure DT, Chang W, Marcus CM, Pfeiffer LN, West KW. 2012. Phys. Rev. Lett. 108:256804
  79. McClure DT, Zhang Y, Rosenow B, Levenson-Falk EM, Marcus CM et al. 2009. Phys. Rev. Lett. 103:206806
  80. Zhang Y, McClure DT, Levenson-Falk EM, Marcus CM, Pfeiffer LN, West KW. 2009. Phys. Rev. B 79:241304
  81. Radu IP, Miller JB, Marcus CM, Kastner MA, Pfeiffer LN, West KW. 2008. Science 320:899–902
  82. Miller JB, Radu IP, Zumbuhl DM, Levenson-Falk EM, Kaster MA et al. 2007. Nat. Phys. 3:561–65
  83. Dolev M, Heiblum M, Umansky V, Stern A, Mahalu D. 2008. Nature 452:829–34
  84. Ofek N, Bid A, Heiblum M, Stern A, Umansky V, Mahalu D. 2010. Proc. Natl. Acad. Sci. USA 107:5276–81
  85. Willett RL, Pfeiffer LN, West KW. 2010. Phys. Rev. B 82:205301
  86. Willett RL, Pfeiffer LN, West KW. 2009. Proc. Natl. Acad. Sci. USA 106:8853–58
  87. Willett RL, Manfra MJ, Pfeiffer LN, West KW. 2007. Appl. Phys. Lett. 91:052105
  88. Willett RL, Nayak C, Shtengel K, Pfeiffer LN, West KW. 2013. Phys. Rev. Lett 111:186401
  89. Willett RL, Pfeiffer LN, West KW, Manfra MJ. 2013. arXiv:1301.2594v1
  90. Rossler C, Feil T, Mensch R, Ihn T, Ensslin K et al. 2010. New J. Phys. 12:043007
  91. Kloeffel C, Loss D. 2013. Annu. Rev. Condens. Matter Phys. 4:51–81
  92. Dial OE, Shulman MD, Harvey SP, Blum H, Umansky V, Yacoby A. 2013. Phys. Rev. Lett. 110:146804
  93. Shulman MD, Dial OE, Harvey SP, Bluhm H, Umansky V, Yacoby A. 2012. Science 336:202–5
  94. Trifunovic L, Dial O, Trif M, Wootton JR, Abebe R et al. 2012. Phys. Rev. X 2:011006
  95. Bluhm H, Foletti S, Neder I, Rudner M, Mahalu D et al. 2011. Nat. Phys. 7:109–13
  96. Bluhm H, Foletti S, Mahalu D, Umansky V, Yacoby A. 2010. Phys. Rev. Lett. 105:216803
  97. Medford J, Cywinski L, Barthel C, Marcus CM, Hanson MP, Gossard AC. 2012. Phys. Rev. Lett. 108:086802
  98. van Weperen I, Armstrong BD, Laird EA, Medford J, Marcus CM et al. 2011. Phys. Rev. Lett. 107:030506
  99. Barthel C, Medford J, Marcus CM, Hanson MP, Gossard AC. 2010. Phys. Rev. Lett. 105:266808
  100. Braakman FR, Barthelemy P, Reichl C, Wegscheider W, Vandersypen LMK. 2013. Nat. Nanotechnol. 8:432–37
  101. Srinivasa V, Nowack KC, Shafiei M, Vandersypen LMK, Taylor JM. 2013. Phys. Rev. Lett. 110:196803
  102. Buizert C, Koppens FHL, Pioro-Ladriere M, Tranitz H-P, Vink IT et al. 2008. Phys. Rev. Lett. 101:226603
  103. Hitachi K, Ota T, Muraki K. 2013. Appl. Phys. Lett. 102:192194
  104. Suen YW, Engel L, Santos MB, Shayegan M, Tsui DC. 1992. Phys. Rev. Lett. 68:1379–82
  105. Eisenstein JP, Boebinger GS, Pfeiffer LN, West KW, He S. 1992. Phys. Rev. Lett. 68:1383–86
  106. Spielman IB, Eisenstein JP, Pfeiffer LN, West KW. 2000. Phys. Rev. Lett. 84:5808–11
  107. Kellogg M, Spielman IB, Eisenstein JP, Pfeiffer LN, West KW. 2002. Phys. Rev. Lett. 88:126804
  108. Kellogg M, Eisenstein JP, Pfeiffer LN, West KW. 2004. Phys. Rev. Lett. 93:036801
  109. Spielman IB, Eisenstein JP, Pfeiffer LN, West KW. 2001. Phys. Rev. Lett. 87:036803
  110. Champange AR, Finck ADK, Eisenstein JP, Pfeiffer LN, West KW. 2008. Phys. Rev. B 78:205310
  111. Misra S, Bishop NC, Tutuc E, Shayegan M. 2008. Phys. Rev. B 77:161301
  112. Yoon Y, Tiemann L, Schmult S, Dietsche W, von Klitzing K, Wegscheider W. 2010. Phys. Rev. Lett. 104:116802
  113. Nandi D, Finck ADK, Eisenstein JP, Pfeiffer LN, West KW. 2012. Nature 488:481–84
  114. Schmult S, Tiemann L, Dietsche W, von Klitzing K. 2010. J. Vac. Sci. Technol. 28:C3C1
  115. Santos MB, Suen YW, Shayegan M, Li YP, Engel LW, Tsui DC. 1992. Phys. Rev. Lett. 68:1188–91
  116. Papadakis SJ, De Poortere EP, Manoharan HC, Shayegan M, Winkler R. 1999. Science 283:2056–58
  117. Papadakis SJ, De Poortere EP, Shayegan M, Winkler R. 2000. Phys. Rev. Lett. 84:5592–95
  118. Manfra MJ, Pfeiffer LN, West KW, de Picciotto R, Baldwin KW. 2005. Appl. Phys. Lett. 86:162106
  119. Gerl G, Schmult S, Tranitz H-P, Mitzkus C, Wegscheider W. 2005. Appl. Phys. Lett. 86:252105
  120. Manfra MJ, de Picciotto R, Jiang Z, Simon SH, Pfeiffer LN et al. 2007. Phys. Rev. Lett. 98:206804
  121. Manfra MJ, Hwang EH, Das Sarma S, Pfeiffer LN, West KW, Sergent AM. 2007. Phys. Rev. Lett. 99:236402
  122. Kumar A, Samkharadze N, Csathy GA, Manfra MJ, Pfeiffer LN, West KW. 2011. Phys. Rev. B 83:201305
  123. Watson JD, Mondal S, Gardner G, Csathy GA, Manfra MJ. 2012. Phys. Rev. B 85:165301
  124. Watson JD, Mondal S, Csathy GA, Manfra MJ, Hwang EH et al. 2011. Phys. Rev. B 83:241305
  125. Koduvayur SP, Lyanda-Geller Y, Khlebnikov S, Csathy GA, Manfra MJ et al. 2011. Phys. Rev. Lett. 106:016804
  126. Nextnano3 simulator. ©1998-2008. Walter Schottky Institute http://www.nextnano.de/nextnano3/index.htm
  127. Deng N, Kumar A, Manfra MJ, Pfeiffer LN, West KW, Csathy GA. 2012. Phys. Rev. Lett. 108:086803
  128. Tiemann L, Gamez G, Kumada N, Muraki K. 2012. Science 335:828–31
  129. Peterson M, Jolicoeur T, Das Sarma S. 2008. Phys. Rev. Lett 101:016807
  130. Xia J, Cvicek V, Eisenstein J, Pfeiffer L, West K. 2010. Phys. Rev. Lett 105:176807
  131. Liu Y, Kamburov D, Shayegan M, Pfeiffer L, West K, Baldwin K. 2011. Phys. Rev. Lett 107:176805
  132. Shabani J, Liu Y, Shayegan M. 2010. Phys. Rev. Lett 105:246805
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Molecular Beam Epitaxy of Ultra-High-Quality AlGaAs/GaAs Heterostructures: Enabling Physics in Low-Dimensional Electronic Systems
Annual Review of Condensed Matter Physics 5, 347 (2014); https://doi.org/10.1146/annurev-conmatphys-031113-133905
/content/journals/10.1146/annurev-conmatphys-031113-133905
/content/journals/10.1146/annurev-conmatphys-031113-133905
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