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Annual Review of Materials Research

Volume 54, 2024

Beta-Gallium Oxide Material and Device Technologies

Abstract

Beta-gallium oxide (β-GaO) is a material with a history of research and development spanning about 70 years; however, it has attracted little attention as a semiconductor for a long time. The situation has changed completely in the last ten years, and the world has seen increasing demand for active research and development of both materials and devices. Many of its distinctive physical properties are attributed to its very large bandgap energy of 4.5 eV. Another important feature is that it is possible to grow large bulk single crystals by melt growth. In this article, we first discuss the important physical properties of β-GaO for electronic device applications, followed by bulk melt growth and thin-film epitaxial growth technologies. Then, state-of-the-art β-GaO transistor and diode technologies are discussed.

Keyword(s): Ga2O3, gallium oxide
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/content/journals/10.1146/annurev-matsci-080921-104058
2024-08-05
2025-04-18
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Beta-Gallium Oxide Material and Device Technologies
Annual Review of Materials Research 54, 175 (2024); https://doi.org/10.1146/annurev-matsci-080921-104058
/content/journals/10.1146/annurev-matsci-080921-104058
/content/journals/10.1146/annurev-matsci-080921-104058
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