1932

Abstract

Basic scientific and technological advances on ferroelectric thin films and heterostructures are discussed in relation to the work on nonvolatile ferroelectric random access memories (NVFRAMs) performed by different groups during the last seven years. A reasonable understanding of the synthesis and microstructure-property relationships of ferroelectric thin films for NVFRAMs is demonstrated. Materials integration strategies developed to fabricate ferroelectric capacitors with practically no fatigue or imprint, long polarization retention, and low leakage current are discussed. These properties have been obtained using two ferroelectric materials, Pb(ZrTi)O (PZT) and SrBiTaO (SBT), that are the main candidates for application to the first generation of commercial NVFRAMs. A discussion of current knowledge and future research directions is presented.

Loading

Article metrics loading...

/content/journals/10.1146/annurev.matsci.28.1.501
1998-08-01
2024-06-15
Loading full text...

Full text loading...

/content/journals/10.1146/annurev.matsci.28.1.501
Loading
/content/journals/10.1146/annurev.matsci.28.1.501
Loading

Data & Media loading...

  • Article Type: Review Article
This is a required field
Please enter a valid email address
Approval was a Success
Invalid data
An Error Occurred
Approval was partially successful, following selected items could not be processed due to error