1932

Abstract

We discuss high-dielectric films, in general, oxide ferroelectrics based on simple perovskite structures and related Aurivillius-phase layered structure perovskites employed as thin-film capacitors in dynamic random access memories (DRAMs). Emphasis is on breakdown mechanisms and limits, leakage currents, electrodes and electrode interfaces, scaling to submicron geometries, and deposition techniques.

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/content/journals/10.1146/annurev.matsci.28.1.79
1998-08-01
2024-06-14
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  • Article Type: Review Article
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