1932

Abstract

We review recent advances in our understanding of the epitaxial growth and properties of SiGe/Si heterostructures for applications in high-speed field-effect transistors. Improvements in computing power and experimental methods have led to new calculations and experiments that reveal the complexity of 60° misfit dislocations and their interactions, which ultimately determine the characteristics of strain-relaxed SiGe films serving as a buffer layer for strained-layer devices. Novel measurements of the microstructure of relaxed SiGe films are discussed. We also present recent work on the epitaxial growth of SiGe/Si heterostructures by ultra-high-vacuum chemical vapor deposition. This growth method not only provides device quality buffer layers, but abrupt, high-concentration phosphorous-doping profiles, and high-mobility SGe/Ge composite hole channels have also been grown. These achievements enabled the fabrication of outstanding n- and p-channel modulation-doped field-effect transistors that show enormous promise for a variety of applications.

Loading

Article metrics loading...

/content/journals/10.1146/annurev.matsci.30.1.335
2000-08-01
2024-06-24
Loading full text...

Full text loading...

/content/journals/10.1146/annurev.matsci.30.1.335
Loading
/content/journals/10.1146/annurev.matsci.30.1.335
Loading

Data & Media loading...

  • Article Type: Review Article
This is a required field
Please enter a valid email address
Approval was a Success
Invalid data
An Error Occurred
Approval was partially successful, following selected items could not be processed due to error