1932

Abstract

In situ Ultra-High Vacuum (UHV) electron microscopy, including Transmission Electron Microscopy (TEM) at 300 keV electron energy and Low-Energy Electron Microscopy (LEEM) at 0-30 eV electron energy, has advanced enormously over the last decade. Growth of thin films such as epitaxial SiGe alloy thin films on Si substrates has become routine, allowing high-resolution video-rate studies of processes such as misfit dislocation injection and interaction, surface roughening and faceting, self-assembly of quantum dots, and shape transitions in such quantum dots. We review results obtained in the SiGe/Si system in the last five years. In addition we discuss new directions in in situ electron microscopy as they apply to thin film formation in a range of materials and environments.

[Erratum]

[Erratum, Closure]

An erratum has been published for this article:
Advances in In Situ Ultra-High Vacuum Electron Microscopy: Growth of SiGe on Si
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/content/journals/10.1146/annurev.matsci.30.1.431
2000-08-01
2024-04-19
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  • Article Type: Review Article
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