In situ Ultra-High Vacuum (UHV) electron microscopy, including Transmission Electron Microscopy (TEM) at 300 keV electron energy and Low-Energy Electron Microscopy (LEEM) at 0-30 eV electron energy, has advanced enormously over the last decade. Growth of thin films such as epitaxial SiGe alloy thin films on Si substrates has become routine, allowing high-resolution video-rate studies of processes such as misfit dislocation injection and interaction, surface roughening and faceting, self-assembly of quantum dots, and shape transitions in such quantum dots. We review results obtained in the SiGe/Si system in the last five years. In addition we discuss new directions in in situ electron microscopy as they apply to thin film formation in a range of materials and environments.


[Erratum, Closure]

An erratum has been published for this article:
Advances in In Situ Ultra-High Vacuum Electron Microscopy: Growth of SiGe on Si

Article metrics loading...

Loading full text...

Full text loading...


Data & Media loading...

  • Article Type: Review Article
This is a required field
Please enter a valid email address
Approval was a Success
Invalid data
An Error Occurred
Approval was partially successful, following selected items could not be processed due to error