Electron energy loss fine structure near the threshold of inner-shell edges can potentially give valuable information on bonding on an atomic scale. To use near-edge structure it is essential to understand what factors influence both the occupied and unoccupied local density of states in the material of interest. Different techniques of electronic structure theory are suitable for metals, semiconductors, and ionic materials, although some methods can be applied to a wide range of systems. To extract quantitative information on bonding it is important to avoid those edges that are strongly affected by the presence of the core hole such as cations in ionic materials.


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  • Article Type: Review Article
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